Truly ohmic contacts in engineered Al/Si/InGaAs(001) diodes

被引：11

作者：

De Franceschi, S

Beltram, F

Marinelli, C

Sorba, L

Lazzarino, M

Muller, BH

Franciosi, A

机构：

[1] Scuola Normale Super Pisa, I-56126 Pisa, Italy

[2] INFM, I-56126 Pisa, Italy

[3] INFM, Lab Nazl TASC, Area Ric, I-34012 Trieste, Italy

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 16期

关键词：

D O I：

10.1063/1.121244

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the fabrication of nonalloyed ohmic contacts on n-InxGa1-xAs (0.25 less than or equal to x less than or equal to 0.38) grown by molecular beam epitaxy (MBE) on GaAs(001), This result is obtained by suppression of the native Al/InGaAs Schottky barrier by means of the MBE growth of Si bilayers at the metal-semiconductor interface. Truly ohmic contacts are demonstrated by x-ray photoemission spectroscopy and current-voltage techniques. (C) 1998 American Institute of Physics.

引用

页码：1996 / 1998

页数：3