Copper indium diselenide solar cells prepared by electrodeposition

被引：12

作者：

Guimard, D ^{[1
]}

Grand, PP ^{[1
]}

Bodereau, N ^{[1
]}

Cowache, P ^{[1
]}

Guillemoles, JF ^{[1
]}

Lincot, D ^{[1
]}

Taunier, S ^{[1
]}

Ben Farah, M ^{[1
]}

Mogensen, P ^{[1
]}

机构：

[1] CNRS, UMR 7575, LECA, F-75231 Paris 05, France

来源：

CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年

关键词：

D O I：

10.1109/PVSC.2002.1190659

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Copper indium diselenide (CIS) layers have been prepared by an electrodeposition based process. The composition, density and adhesion properties of theses films were found to be highly suitable for use as the active layer in a CIS solar cell. After recrystallisation and the,completion of the device layer (by the deposition of CdS and ZnO layers), efficiencies as high as 8.8 % were found (total area, 100 mW/cm(2), no AR coating) for small area devices (0.06 cm(2)). To the best of our knowledge, this is a record efficiency for electrodeposited CIS, without any post additional vacuum deposition process. Promising results have been also obtained on 5x5 cm(2) substrates (average efficiency of 4.5 %).

引用

页码：692 / 695

页数：4

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