GaN0.011P0.989 red light-emitting diodes directly grown on GaP substrates

被引：32

作者：

Xin, HP ^{[1
]}

Welty, RJ ^{[1
]}

Tu, CW ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 13期

关键词：

D O I：

10.1063/1.1311957

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Red light-emitting diodes (LEDs) emitting at 670 nm and employing GaN0.011P0.989 p-n homojunction grown on a (100) GaP substrate by gas-source molecular beam epitaxy with a rf plasma nitrogen source have been obtained. The integrated photoluminescence intensity of GaNP p-n homojunction LED is 5 times stronger than that of Ga0.51In0.49P bulk layer, but the peak width is much broader. Compared to conventional high-brightness AlGaInP red LEDs, our LED structure saves two process steps of etch removing of the GaAs absorbing substrate and wafer bonding to a GaP transparent substrate. (C) 2000 American Institute of Physics. [S0003-6951(00)01239-0].

引用

页码：1946 / 1948

页数：3

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