Magnetotransport properties of bismuth films on p-GaAs

被引：39

作者：

Vereecken, PM ^{[1
]}

Sun, L

Searson, PC

Tanase, M

Reich, DH

Chien, CL

机构：

[1] Johns Hopkins Univ, Dept Mat Sci & Engn, Baltimore, MD 21218 USA

[2] Johns Hopkins Univ, Dept Phys & Astron, Baltimore, MD 21218 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 11期

关键词：

D O I：

10.1063/1.1323537

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polycrystalline Bi films were deposited onto p-GaAs(100) by electrochemical deposition. Annealing resulted in the formation of large grains with a preferred [012] orientation. The p-GaAs/Bi junctions were rectifying and the barrier height sind ideality factor decreased with increasing film thickness. For films greater than 0.5 mum in thickness, the barrier height was about 0.56 eV and the ideality factor was between 1.1-1.2 for both as-deposited and annealed films. The resistance of the as-deposited films exhibited a negative temperature coefficient whereas the annealed films exhibited a positive temperature coefficient due tol the limiting carrier mean free path. The magnetoresistance (MR) exhibited a quasilinear field dependence with an MR effect as large as 5600 (560 000%) at 5 K and 2.2 (220%) at room temperature. (C) 2000 American Institute of Physics. [S0021-8979(00)03824-X].

引用

页码：6529 / 6535

页数：7

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