Magnetic order in GaMnAs layers

被引：3

作者：

Fedorych, O

Wilamowski, Z

Potemski, M

Byszewski, M

Sadowski, J

机构：

[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[2] CNRS, MPI, Grenoble High Magnet Field Lab, F-38042 Grenoble, France

[3] Univ Copenhagen, Oersted Lab, DK-2100 Copenhagen, Denmark

[4] Chalmers Univ Technol, Dept Expt Phys, SE-41296 Gothenburg, Sweden

[5] Univ Gothenburg, SE-41296 Gothenburg, Sweden

来源：

JOURNAL OF SUPERCONDUCTIVITY | 2003年 / 16卷 / 01期

关键词：

spintronic; diluted magnetic semiconductor; ferromagnetism;

D O I：

10.1023/A:1023272315269

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

MBE grown Ga1-xMnxAs layers were investigated by means of magnetic resonance techniques. Two phases can be distinguished: an almost isotropic ferromagnetic phase in insulating layers and an anisotropic ferromagnetic phase in the metallic Ga1-xMnxAs. Under a strong magnetic field the field-induced insulator-to-metal transition is accompanied by the change from the ferromagnetic to the ferrimagnetic phase.

引用

页码：51 / 53

页数：3

共 9 条

[1] Effects of disorder on ferromagnetism in diluted magnetic semiconductors [J].