Nanoscale Tunable Reduction of Graphene Oxide for Graphene Electronics
被引:637
作者:
Wei, Zhongqing
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h-index: 0
机构:
USN, Res Lab, Div Chem, Washington, DC 20375 USAUSN, Res Lab, Div Chem, Washington, DC 20375 USA
Wei, Zhongqing
[1
]
Wang, Debin
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h-index: 0
机构:
Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USAUSN, Res Lab, Div Chem, Washington, DC 20375 USA
Wang, Debin
[2
]
Kim, Suenne
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USAUSN, Res Lab, Div Chem, Washington, DC 20375 USA
Kim, Suenne
[2
]
Kim, Soo-Young
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Chem & Biochem, Atlanta, GA 30332 USA
Chung Ang Univ, Sch Chem Engn & Mat Sci, Seoul 156756, South KoreaUSN, Res Lab, Div Chem, Washington, DC 20375 USA
Kim, Soo-Young
[3
,4
]
Hu, Yike
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h-index: 0
机构:
Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USAUSN, Res Lab, Div Chem, Washington, DC 20375 USA
Hu, Yike
[2
]
Yakes, Michael K.
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h-index: 0
机构:
USN, Res Lab, Div Chem, Washington, DC 20375 USAUSN, Res Lab, Div Chem, Washington, DC 20375 USA
Yakes, Michael K.
[1
]
Laracuente, Arnaldo R.
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机构:
USN, Res Lab, Div Chem, Washington, DC 20375 USAUSN, Res Lab, Div Chem, Washington, DC 20375 USA
Laracuente, Arnaldo R.
[1
]
Dai, Zhenting
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h-index: 0
机构:
Univ Illinois, Dept Mech Sci & Engn, Urbana, IL 61801 USAUSN, Res Lab, Div Chem, Washington, DC 20375 USA
Dai, Zhenting
[5
]
Marder, Seth R.
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h-index: 0
机构:
Georgia Inst Technol, Sch Chem & Biochem, Atlanta, GA 30332 USAUSN, Res Lab, Div Chem, Washington, DC 20375 USA
Marder, Seth R.
[3
]
Berger, Claire
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA
CNRS Inst Neel, F-38042 Grenoble 9, FranceUSN, Res Lab, Div Chem, Washington, DC 20375 USA
Berger, Claire
[2
,6
]
King, William P.
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h-index: 0
机构:
Univ Illinois, Dept Mech Sci & Engn, Urbana, IL 61801 USAUSN, Res Lab, Div Chem, Washington, DC 20375 USA
King, William P.
[5
]
de Heer, Walter A.
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h-index: 0
机构:
Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USAUSN, Res Lab, Div Chem, Washington, DC 20375 USA
de Heer, Walter A.
[2
]
Sheehan, Paul E.
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h-index: 0
机构:
USN, Res Lab, Div Chem, Washington, DC 20375 USAUSN, Res Lab, Div Chem, Washington, DC 20375 USA
Sheehan, Paul E.
[1
]
Riedo, Elisa
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h-index: 0
机构:
Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USAUSN, Res Lab, Div Chem, Washington, DC 20375 USA
Riedo, Elisa
[2
]
机构:
[1] USN, Res Lab, Div Chem, Washington, DC 20375 USA
[2] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA
[3] Georgia Inst Technol, Sch Chem & Biochem, Atlanta, GA 30332 USA
[4] Chung Ang Univ, Sch Chem Engn & Mat Sci, Seoul 156756, South Korea
[5] Univ Illinois, Dept Mech Sci & Engn, Urbana, IL 61801 USA
The reduced form of graphene oxide (GO) is an attractive alternative to graphene for producing large-scale flexible conductors and for creating devices that require an electronic gap. We report on a means to tune the topographical and electrical properties of reduced GO (rGO) with nanoscopic resolution by local thermal reduction of GO with a heated atomic force microscope tip. The rGO regions are up to four orders of magnitude more conductive than pristine GO. No sign of tip wear or sample tearing was observed. Variably conductive nanoribbons with dimensions down to 12 nanometers could be produced in oxidized epitaxial graphene films in a single step that is clean, rapid, and reliable.
机构:
MIT, Lincoln Lab, Adv Silicon Technol Grp, Lexington, MA 02420 USA
IBM Corp, TJ Watson Res Ctr, Armonk, NY 10504 USAMIT, Lincoln Lab, Adv Silicon Technol Grp, Lexington, MA 02420 USA
Kedzierski, Jakub
;
Hsu, Pei-Lan
论文数: 0引用数: 0
h-index: 0
机构:
MIT, Lincoln Lab, Adv Silicon Technol Grp, Lexington, MA 02420 USAMIT, Lincoln Lab, Adv Silicon Technol Grp, Lexington, MA 02420 USA
Hsu, Pei-Lan
;
Healey, Paul
论文数: 0引用数: 0
h-index: 0
机构:
MIT, Lincoln Lab, Adv Silicon Technol Grp, Lexington, MA 02420 USAMIT, Lincoln Lab, Adv Silicon Technol Grp, Lexington, MA 02420 USA
Healey, Paul
;
Wyatt, Peter W.
论文数: 0引用数: 0
h-index: 0
机构:
MIT, Lincoln Lab, Adv Silicon Technol Grp, Lexington, MA 02420 USAMIT, Lincoln Lab, Adv Silicon Technol Grp, Lexington, MA 02420 USA
Wyatt, Peter W.
;
Keast, Craig L.
论文数: 0引用数: 0
h-index: 0
机构:
MIT, Lincoln Lab, Adv Silicon Technol Grp, Lexington, MA 02420 USAMIT, Lincoln Lab, Adv Silicon Technol Grp, Lexington, MA 02420 USA
Keast, Craig L.
;
Sprinkle, Mike
论文数: 0引用数: 0
h-index: 0
机构:
Sch Phys Georgia Tech, Atlanta, GA 30332 USAMIT, Lincoln Lab, Adv Silicon Technol Grp, Lexington, MA 02420 USA
Sprinkle, Mike
;
Berger, Claire
论文数: 0引用数: 0
h-index: 0
机构:
CNRS, Inst Neel, F-38042 Grenoble, France
Georgia Inst Technol, Atlanta, GA 30332 USAMIT, Lincoln Lab, Adv Silicon Technol Grp, Lexington, MA 02420 USA
Berger, Claire
;
de Heer, Walt A.
论文数: 0引用数: 0
h-index: 0
机构:
Sch Phys Georgia Tech, Atlanta, GA 30332 USAMIT, Lincoln Lab, Adv Silicon Technol Grp, Lexington, MA 02420 USA
机构:
MIT, Lincoln Lab, Adv Silicon Technol Grp, Lexington, MA 02420 USA
IBM Corp, TJ Watson Res Ctr, Armonk, NY 10504 USAMIT, Lincoln Lab, Adv Silicon Technol Grp, Lexington, MA 02420 USA
Kedzierski, Jakub
;
Hsu, Pei-Lan
论文数: 0引用数: 0
h-index: 0
机构:
MIT, Lincoln Lab, Adv Silicon Technol Grp, Lexington, MA 02420 USAMIT, Lincoln Lab, Adv Silicon Technol Grp, Lexington, MA 02420 USA
Hsu, Pei-Lan
;
Healey, Paul
论文数: 0引用数: 0
h-index: 0
机构:
MIT, Lincoln Lab, Adv Silicon Technol Grp, Lexington, MA 02420 USAMIT, Lincoln Lab, Adv Silicon Technol Grp, Lexington, MA 02420 USA
Healey, Paul
;
Wyatt, Peter W.
论文数: 0引用数: 0
h-index: 0
机构:
MIT, Lincoln Lab, Adv Silicon Technol Grp, Lexington, MA 02420 USAMIT, Lincoln Lab, Adv Silicon Technol Grp, Lexington, MA 02420 USA
Wyatt, Peter W.
;
Keast, Craig L.
论文数: 0引用数: 0
h-index: 0
机构:
MIT, Lincoln Lab, Adv Silicon Technol Grp, Lexington, MA 02420 USAMIT, Lincoln Lab, Adv Silicon Technol Grp, Lexington, MA 02420 USA
Keast, Craig L.
;
Sprinkle, Mike
论文数: 0引用数: 0
h-index: 0
机构:
Sch Phys Georgia Tech, Atlanta, GA 30332 USAMIT, Lincoln Lab, Adv Silicon Technol Grp, Lexington, MA 02420 USA
Sprinkle, Mike
;
Berger, Claire
论文数: 0引用数: 0
h-index: 0
机构:
CNRS, Inst Neel, F-38042 Grenoble, France
Georgia Inst Technol, Atlanta, GA 30332 USAMIT, Lincoln Lab, Adv Silicon Technol Grp, Lexington, MA 02420 USA
Berger, Claire
;
de Heer, Walt A.
论文数: 0引用数: 0
h-index: 0
机构:
Sch Phys Georgia Tech, Atlanta, GA 30332 USAMIT, Lincoln Lab, Adv Silicon Technol Grp, Lexington, MA 02420 USA