Nanoscale Tunable Reduction of Graphene Oxide for Graphene Electronics

被引:637
作者
Wei, Zhongqing [1 ]
Wang, Debin [2 ]
Kim, Suenne [2 ]
Kim, Soo-Young [3 ,4 ]
Hu, Yike [2 ]
Yakes, Michael K. [1 ]
Laracuente, Arnaldo R. [1 ]
Dai, Zhenting [5 ]
Marder, Seth R. [3 ]
Berger, Claire [2 ,6 ]
King, William P. [5 ]
de Heer, Walter A. [2 ]
Sheehan, Paul E. [1 ]
Riedo, Elisa [2 ]
机构
[1] USN, Res Lab, Div Chem, Washington, DC 20375 USA
[2] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA
[3] Georgia Inst Technol, Sch Chem & Biochem, Atlanta, GA 30332 USA
[4] Chung Ang Univ, Sch Chem Engn & Mat Sci, Seoul 156756, South Korea
[5] Univ Illinois, Dept Mech Sci & Engn, Urbana, IL 61801 USA
[6] CNRS Inst Neel, F-38042 Grenoble 9, France
基金
美国国家科学基金会;
关键词
EPITAXIAL GRAPHENE; NANOLITHOGRAPHY; SHEETS; FILMS; TRANSPARENT;
D O I
10.1126/science.1188119
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The reduced form of graphene oxide (GO) is an attractive alternative to graphene for producing large-scale flexible conductors and for creating devices that require an electronic gap. We report on a means to tune the topographical and electrical properties of reduced GO (rGO) with nanoscopic resolution by local thermal reduction of GO with a heated atomic force microscope tip. The rGO regions are up to four orders of magnitude more conductive than pristine GO. No sign of tip wear or sample tearing was observed. Variably conductive nanoribbons with dimensions down to 12 nanometers could be produced in oxidized epitaxial graphene films in a single step that is clean, rapid, and reliable.
引用
收藏
页码:1373 / 1376
页数:4
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