Effects of etching holes on capacitance and tuning range in MEMS parallel plate variable capacitors

被引：14

作者：

Elshurafa, Amro M. ^{[1
]}

El-Masry, Ezz I. ^{[1
]}

机构：

[1] Dalhousie Univ, Halifax, NS B3J 2X4, Canada

来源：

6TH INTERNATIONAL WORKSHOP ON SYSTEM-ON-CHIP FOR REAL-TIME APPLICATIONS, PROCEEDINGS | 2006年

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1109/IWSOC.2006.348240

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper presents extensive simulations of MEMS parallel plate variable capacitors with attention dedicated towards variations in etching holes' properties. For various separation distances between the plates, different hole sizes and density were created and capacitances were extracted. Within typical values, it was found that the configuration of the holes might affect the tuning range by no more than 16% at extreme cases of their theoretical counterparts. Simulations were done using finite element modeling.

引用

页码：221 / +

页数：2

共 6 条

[1] Micromachined electro-mechanically tunable capacitors and their applications to RF IC's [J].