Measurement of copper drift in methylsilsesquiazane-methylsilsesquioxane dielectric films

被引：18

作者：

Mukaigawa, S ^{[1
]}

Aoki, T ^{[1
]}

Shimizu, Y ^{[1
]}

Kikkawa, T ^{[1
]}

机构：

[1] Hiroshima Univ, Res Ctr Nanodevices & Syst, Higashihiroshima, Hiroshima 7398527, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 4B期

关键词：

Cu drift; low-K dielectric film; methylsilsesquiazane; methylsilsesquioxane; BTS; TDDB; flatband voltage;

D O I：

10.1143/JJAP.39.2189

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Measurement of Cu drifts in methylsilsesquiazane-methylsilsesquioxane dielectric films in the presence of an electric field was conducted using bias-temperature stress (BTS) and capacitor-voltage (CV) analysis as well as time dependent dielectric breakdown (TDDB) stress. The amount of Cu ions in the dielectric films can be estimated making use of the flatband voltage shift Delta V-FB from the BTS. Comparing the flatband voltage measured by CV analysis with the leakage current integrated over time, it is found that the main content of the leakage current during BTS is ionic current that can be attributed to the drift of Cu and mobile ions. The Cu ions cause the leakage current during TDDB stress to increase. The drift rate of Cu in methylsilsesquioxane is lower than the reported values in polyarylene ether (PAE) and fluorinated polyimide (FPI), and larger than that in plasma enhanced chemical vapor deposition (PECVD)-SiON.

引用

页码：2189 / 2193

页数：5

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