A polariton laser based on a bulk GaN microcavity

被引：7

作者：

Solnyshkov, D. ^{[1
]}

Mapuech, G. ^{[1
]}

机构：

[1] Univ Clermont Ferrand, CNRS, LASMEA, F-63177 Aubiere, France

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2007年 / 41卷 / 5-6期

关键词：

polariton laser; bulk microcavity; GaN; kinetic phase diagram;

D O I：

10.1016/j.spmi.2007.03.013

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Simulations of polariton relaxation in a bulk GaN microcavity are performed by solving semi-classical Boltzmann equations. The structure which is considered is that of a recently grown microcavity showing strong coupling at 300 K. A kinetic phase diagram is calculated. We show that such a cavity can operate as a low-threshold polariton laser at room temperature. (c) 2007 Elsevier Ltd. All rights reserved.

引用

页码：279 / 283

页数：5

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