GaN microcavities: Giant Rabi splitting and optical anisotropy

被引：49

作者：

Kavokin, A ^{[1
]}

Gil, B ^{[1
]}

机构：

[1] Univ Montpellier 2, Etud Semicond Grp, F-34095 Montpellier, France

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 22期

关键词：

D O I：

10.1063/1.121488

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Numerical simulation of light reflection from a lambda/2 GaN microcavity with Ga0.8Al0.2N/Ga0.5Al0.5N Bragg mirrors grown on the A surface of Al2O3 revealed a Rabi splitting of the order of 50 meV and remarkable optical anisotropy. These effects are originated from the giant exciton oscillator strength in GaN and a pronounced uniaxial strain in the structure. (C) 1998 American Institute of Physics.

引用

页码：2880 / 2881

页数：2

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