Optical properties of wurtzite GaN epilayers grown on A-plane sapphire

被引：91

作者：

Alemu, A

Gil, B

Julier, M

Nakamura, S

机构：

[1] Univ Montpellier 2, Etud Semicond Grp, CNRS, F-34095 Montpellier 5, France

[2] Nichia Chem Ind Ltd, R&D Dept, Tokushima 774, Japan

来源：

PHYSICAL REVIEW B | 1998年 / 57卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.57.3761

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The exciton binding energies are measured in GaN grown on A-plane sapphire. A value of 25+/-1 meV is found to be consistent with reflectance and photoreflectance experiments. This 25 meV value matches very well the results obtained on GaN epilayers grown on C-plane sapphire with strong biaxial compression, and seems to indicate that exciton energies in GaN epilayers are predominantly influenced by strain fields. From the in-plane anisotropy of optical response, we deduce a value of -2.4 eV for the C-5 deformation potential in GaN. [S0163-1829(98)03508-5].

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页码：3761 / 3764

页数：4

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