Dispersion of bulk exciton polaritons in a semiconductor microcavity

Dispersion of two-dimensional (2D) exciton polaritons in a semiconductor microcavity containing bulk excitons in a central layer has been considered using the transfer-matrix technique and Pekar's additional boundary conditions. Solving dispersion equations for TE and TM polarized light modes we have obtained angle-dependent complex self-energies of eigenpolariton states, which have been compared with frequencies of resonant features in the calculated spectra. In TM polarization a pronounced spectral feature associated with the longitudinal polariton mode has been found in the vicinity of the lowest transverse polariton state, so that the 2D-polariton dispersion has a form of double anticrossing in this region. In the strong-coupling regime, the polariton splitting (Rabi splitting) decreases with an increasing index of the confined polariton state, splittings between spectral dips exceed strongly Rabi splittings for higher exciton states.