Enhancement of room temperature ferromagnetism in N-doped TiO2-x rutile: Correlation with the local electronic properties

被引：32

作者：

Drera, G. ^{[1
]}

Mozzati, M. C. ^{[2
]}

Galinetto, P. ^{[2
]}

Diaz-Fernandez, Y. ^{[3
]}

Malavasi, L. ^{[3
]}

Bondino, F. ^{[4
]}

Malvestuto, M. ^{[5
]}

Sangaletti, L. ^{[1
]}

机构：

[1] Univ Cattolica, Dipartimento Matemat & Fis, I-25121 Brescia, Italy

[2] Univ Pavia, Dipartimento Fis A Volta, CNISM, I-27100 Pavia, Italy

[3] Univ Pavia, Dipartimento Chim, I-27100 Pavia, Italy

[4] IOM CNR, Lab TASC, I-34149 Basovizza, Italy

[5] Sincrotrone Trieste, I-34149 Basovizza, Italy

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 01期

关键词：

energy gap; ferromagnetic materials; impurity states; magnetic semiconductors; magnetisation; nitrogen; semiconductor doping; titanium compounds; vacancies (crystal); X-ray photoelectron spectra; OXIDES;

D O I：

10.1063/1.3458699

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The magnetic and electronic properties of ferromagnetic undoped and N-doped TiO2-x rutile have been probed by soft x-ray spectroscopies. Upon N doping, a fivefold enhancement of the saturation magnetization is observed. Apparently, this enhancement is not related to an increase in oxygen vacancies, rather to additional in-gap states, arising from the replacement of O with N atoms in the rutile structure that can provide more favorable conditions for the onset of ferromagnetic ordering. (C) 2010 American Institute of Physics. [doi:10.1063/1.3458699]

引用

页数：3

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