High temperature thermoelectric properties of p- and n-type β-FeSi2 with some dopants

被引:70
作者
Kim, SW
Cho, MK
Mishima, Y
Choi, DC
机构
[1] Tokyo Inst Technol, Dept Mat Sci & Engn, Interdisciplinary Grad Sch Sci & Engn, Midori Ku, Yokohama, Kanagawa 2268502, Japan
[2] Chonnam Natl Univ, Dept Mat Sci & Engn, Kwangju 500757, South Korea
关键词
silicide; various; thermoelectric properties; electrical resistance and other electrical properties; thermal properties; powder metallurgy; including consolidation;
D O I
10.1016/S0966-9795(03)00020-7
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Cr doped p-type and Co doped n-type beta-FeSi2 alloys have been prepared using a powder metallurgy technique. Then the effects of Cu and Ge additions on their thermoelectric properties were investigated. Thermoelectric power alpha, electrical conductivity, or, and thermal conductivity, K were measured in a temperature range from 373 to 973 K. Their thermoelectric power is found to decrease with increasing an amount of both Cu and Ge in both type of beta-FeSi2. In contrast, their electrical conductivity exhibit opposite tendency with respect to the amount of both dopants. Their thermal conductivity is more effectively reduced in the Ge addition to them than that in the Cu addition. The figure of merit, Z of binary beta-FeSi2 is 0.19 x 10(-4)/K, and increases by the addition of Cr, Co, and Ge. The maximum figure of merit, Z of 1.3 x 10(-4)/K was obtained in Fe0.95Co0.05Si1.958Ge0.042 at 845 K. (C) 2003 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:399 / 405
页数:7
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