Temperature dependence of the optical transitions in CdTe thin film - Investigation with photoresponse spectra

被引：21

作者：

Mathew, X ^{[1
]}

Enriquez, JP ^{[1
]}

机构：

[1] Univ Nacl Autonoma Mexico, Ctr Invest Energia, Solar Mat Dept, Solar H2 Fuel Cell Grp, Temixco 62580, Morelos, Mexico

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2000年 / 63卷 / 04期

关键词：

CdTe; electrodeposition; Schottky devices; band gap; direct transition; indirect transition; spectral response;

D O I：

10.1016/S0927-0248(00)00054-4

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The CdTe thin films have been prepared by electrochemical method from a bath solution containing cadmium sulfate and tellurium dioxide. Schottky devices of the type Au/CdTe were prepared and the spectral response of the device has been investigated. The direct and indirect transitions in the 1.3-1.6 eV region were calculated from the normalized spectral response data. The temperature dependence of the band gap have been investigated and correlated with the theory. The band gap of CdTe at absolute zero temperature is estimated as 1.61 eV and that the rate of change of E-g with temperature is calculated as -0.4meV/K. The 1.407eV indirect transition involves a trap level near the conduction band edge. The indirect transition also exhibits temperature dependence. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：347 / 354

页数：8

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