Single event upsets in the dual-port-board SRAMs of the MPTB experiment

被引：10

作者：

Barak, J

Barth, JL

Seidleck, CM

Marshall, CJ

Marshall, PW

Carts, MA

Reed, RA

机构：

[1] NASA, Raytheon ST Syst Corp, Goddard Space Flight Ctr, Greenbelt, MD 20771 USA

[2] SFA Inc, NRL, Largo, MD 20785 USA

[3] Soreq NRC, IL-81800 Yavne, Israel

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2000年 / 47卷 / 03期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1109/23.856503

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The in-flight data of SEUs in the devices of panels B and C of the MPTB experiments are presented. Ground test data for M65656 are used to calculate the SEU rates in this device using the calculated flux of ions along the orbit. The models used are CREME96, simple expressions derived here, and the figure of merit model. A very good agreement is found between these calculations and the observed rates.

引用

页码：712 / 717

页数：6

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