Vapor adsorption in thin silicalite-1 films studied by spectroscopic ellipsometry

被引：25

作者：

Bjorklund, RB ^{[1
]}

Hedlund, J

Sterte, J

Arwin, H

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

[2] Univ Lulea, Div Chem Technol, S-97187 Lulea, Sweden

来源：

JOURNAL OF PHYSICAL CHEMISTRY B | 1998年 / 102卷 / 12期

关键词：

D O I：

10.1021/jp973385p

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Thin films of silicalite-1 grown on silicon substrates were studied by spectroscopic ellipsometry. Analysis of spectra using an optical model consisting of a single porous layer on silicon yielded average film thicknesses of 84 and 223 nm for films synthesized for 10 and 30 h. Void fraction for the films was 0.32-0.33. Vapor adsorption from a nitrogen carrier gas at room temperature was monitored by ellipsometry. Isotherms for different adsorbates were obtained by analysis of spectra taken at different Vapor concentrations using an optical model where the void volume was filled with both nitrogen and condensed vapors. Quantification of the condensed vapor amount was based on the changes in refractive index when adsorbates replaced nitrogen in the pores. Adsorbate volumes for water, toluene, 1-propanol, and hexane were 0.13, 0.12, 0.15, and 0.17 cm(3) liquid g(-1) film, respectively.

引用

页码：2245 / 2250

页数：6

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