Fabrication of thin-film cold cathodes by a modified chemical vapor deposition diamond process

被引:10
作者
Weiss, BL [1 ]
Badzian, A
Pilione, L
Badzian, T
Drawl, W
机构
[1] Penn State Univ, Mat Res Lab, University Pk, PA 16802 USA
[2] Penn State Univ, Dept Phys, Altoona, PA 16601 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 02期
关键词
D O I
10.1116/1.589880
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Thin-film cold cathodes have been grown on molybdenum by a modified microwave assisted plasma chemical vapor deposition diamond process. Electron field-emission tests have been performed on the devices. The modification from the chemical vapor deposition diamond process includes the addition of N-2 and O-2 into the plasma during the growth stage. Characterization of these films indicates a disordered tetrahedral carbon structure. Raman spectroscopy shows a disturbance in the cubic symmetry of the lattice and x-ray diffraction indicates a disordered tetrahedral structure. Electron emission testing indicate low turn-on voltages. Current densities from 1 to 8 mA/cm(2) can be obtained for applied fields of 5-8 V/mu m. The results are explained in terms of a change in the electronic band structure and the formation of states in the band gap. (C) 1998 American Vacuum Society. [S0734-211X(98)09502-X].
引用
收藏
页码:681 / 683
页数:3
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