The effect of an asymmetric band of localized deep donors on the electronic transport of high-purity n-type InP

We have investigated the effect of the shape of a band of localized deep donors on the electronic transport of three high-purity n-type InP epilayers. A model accounting for a broad asymmetric band of localized deep donors or complexes of unknown origin, centered 167 meV below the conduction band edge with a width of about 245 meV, provided a remarkable description of both the Hall mobility and Hall electronic concentration in the temperature range of 4.2-300 K. (C) 1997 American Institute of Physics.