n-Si/SiO2/Si heterostructure barrier varactor diode design

被引:7
作者
Fu, Y
Mamor, M
Willander, M
Bengtsson, S
Dillner, L
机构
[1] Univ Gothenburg, Dept Phys, S-41296 Gothenburg, Sweden
[2] Chalmers Univ Technol, Dept Microelect ED, Solid State Elect Lab, S-41296 Gothenburg, Sweden
[3] Univ Gothenburg, Dept Microwave Technol, S-41296 Gothenburg, Sweden
关键词
D O I
10.1063/1.126891
中图分类号
O59 [应用物理学];
学科分类号
摘要
Symmetric C-V and antisymmetric I-V characteristics are essential for a heterostructure barrier varactor (HBV) to generate odd harmonics in a frequency multiplier. Practically high multiplier efficiency is obtained when the shape of the C-V characteristic is sharp near zero bias and the conduction current is low. Here we present the design of an n-type Si/SiO2/Si-based HBV and its state-of-the-art device performance. Self-consistent solutions of the Schrodinger and Poisson equations show a drastic decrease of the conduction current due to the large electron effective mass and the SiO2 barrier height. The shape of the C-V curve can be easily tuned by modifying the thickness of the SiO2 layer. By the techniques compatible with the conventional Si technology, a Si/SiO2/Si varactor junction (having a SiO2 layer of 20 nm) has been processed and the device characteristics are very promising. (C) 2000 American Institute of Physics. [S0003-6951(00)01827-1].
引用
收藏
页码:103 / 105
页数:3
相关论文
共 11 条
  • [1] Dillner L, 1997, MICROW OPT TECHN LET, V15, P26, DOI 10.1002/(SICI)1098-2760(199705)15:1<26::AID-MOP8>3.0.CO
  • [2] 2-N
  • [3] Capacitance analysis for AlGaAs/GaAs and InAlAs/InGaAs heterostructure barrier varactor diodes
    Fu, Y
    Dillner, L
    Stake, J
    Willander, M
    Kollberg, EL
    [J]. JOURNAL OF APPLIED PHYSICS, 1998, 83 (03) : 1457 - 1462
  • [4] AlGaAs/GaAs and InAlAs/InGaAs heterostructure barrier varactors
    Fu, Y
    Stake, J
    Dillner, L
    Willander, M
    Kollberg, EL
    [J]. JOURNAL OF APPLIED PHYSICS, 1997, 82 (11) : 5568 - 5572
  • [5] THEORETICAL-STUDIES OF THE OPTICAL CHARACTERISTICS OF THE RESONANT-TUNNELING LIGHT-EMITTING DIODE
    FU, Y
    WILLANDER, M
    [J]. JOURNAL OF APPLIED PHYSICS, 1994, 76 (07) : 4225 - 4230
  • [6] QUANTUM-BARRIER-VARACTOR DIODES FOR HIGH-EFFICIENCY MILLIMETER-WAVE MULTIPLIERS
    KOLLBERG, E
    RYDBERG, A
    [J]. ELECTRONICS LETTERS, 1989, 25 (25) : 1696 - 1698
  • [7] GAAS SINGLE-BARRIER VARACTORS FOR MILLIMETER-WAVE TRIPLERS - GUIDELINES FOR ENHANCED PERFORMANCE
    KRISHNAMURTHI, K
    NILSEN, SM
    HARRISON, RG
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1994, 42 (12) : 2512 - 2516
  • [8] High performance InP-based heterostructure barrier varactors in single and stack configuration
    Lheurette, E
    Mounaix, P
    Salzenstein, P
    Mollot, F
    Lippens, D
    [J]. ELECTRONICS LETTERS, 1996, 32 (15) : 1417 - 1418
  • [9] Self-consistent modeling of accumulation layers and tunneling currents through very thin oxides
    Rana, F
    Tiwari, S
    Buchanan, DA
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (08) : 1104 - 1106
  • [10] MILLIMETER-WAVE AND SUBMILLIMETER-WAVE MULTIPLIERS USING QUANTUM-BARRIER-VARACTOR (QBV) DIODES
    RYDBERG, A
    GRONQVIST, H
    KOLLBERG, E
    [J]. IEEE ELECTRON DEVICE LETTERS, 1990, 11 (09) : 373 - 375