Mechanism of the GaN LED efficiency falloff with increasing current

被引：18

作者：

Bochkareva, N. I. ^{[1
]}

Voronenkov, V. V. ^{[2
]}

Gorbunov, R. I. ^{[1
]}

Zubrilov, A. S. ^{[1
]}

Lelikov, Y. S. ^{[1
]}

Latyshev, F. E. ^{[3
]}

Rebane, Y. T. ^{[1
]}

Tsyuk, A. I. ^{[2
]}

Shreter, Y. G. ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] St Petersburg State Polytech Univ, St Petersburg 195251, Russia

[3] St Petersburg State Univ, Fock Inst Phys, St Petersburg 198504, Russia

来源：

SEMICONDUCTORS | 2010年 / 44卷 / 06期

关键词：

LIGHT-EMITTING-DIODES; QUANTUM-WELLS; ELECTROLUMINESCENCE; GREEN; TEMPERATURE; STATES;

D O I：

10.1134/S1063782610060175

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The quantum efficiency of GaN LED structures has been studied at various temperatures and biases. It was found that an efficiency falloff is observed with increasing current density and, simultaneously, the tunnel component of the current through the LED grows and the quasi-Fermi levels reach the mobility edge in the InGaN active layer. It is shown that the internal quantum efficiency falloff with increasing current density is due to the carrier leakage from the quantum well as a result of tunnel transitions from its band-tail states to local defect-related energy levels within the energy gaps of the barrier layers.

引用

页码：794 / 800

页数：7

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