共 16 条
[1]
IDENTIFICATION OF VACANCY DEFECTS IN COMPOUND SEMICONDUCTORS BY CORE-ELECTRON ANNIHILATION - APPLICATION TO INP
[J].
PHYSICAL REVIEW B,
1995, 51 (07)
:4176-4185
[3]
Lawther D.W., 1996, DEFECT DIFFUS FOR/JR, P1
[6]
VACANCIES STUDIED BY POSITRON-ANNIHILATION WITH HIGH-MOMENTUM CORE ELECTRONS
[J].
PHYSICAL REVIEW B,
1979, 20 (09)
:3566-3572
[7]
2-DIMENSIONAL DOPPLER BROADENED TECHNIQUE IN POSITRON-ANNIHILATION
[J].
NUCLEAR INSTRUMENTS & METHODS,
1978, 153 (01)
:189-194
[8]
On the electrical deactivation of arsenic in silicon
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1997, 15 (03)
:757-759