On the electrical deactivation of arsenic in silicon

被引：11

作者：

Myler, U

Simpson, PJ

Lawther, DW

Rousseau, PM

机构：

[1] UNIV PRINCE EDWARD ISL,DEPT PHYS,CHARLOTTETOWN,PE C1A 4P3,CANADA

[2] STANFORD UNIV,CTR INTEGRATED SYST,STANFORD,CA 94305

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1997年 / 15卷 / 03期

关键词：

D O I：

10.1116/1.589382

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Previous work on thermally induced arsenic deactivation in highly doped silicon has proven the generation bf vacancies and suggests the formation of arsenic-vacancy clusters as the deactivation mechanism. Using positron annihilation spectroscopy in the two-detector coincidence geometry, we are able to show that the thermally generated vacancies are indeed surrounded by arsenic atoms. (C) 1997 American Vacuum Society.

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收藏

页码：757 / 759

页数：3

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