VACANCY GENERATION RESULTING FROM ELECTRICAL DEACTIVATION OF ARSENIC

被引：68

作者：

LAWTHER, DW ^{[1
]}

MYLER, U ^{[1
]}

SIMPSON, PJ ^{[1
]}

ROUSSEAU, PM ^{[1
]}

GRIFFIN, PB ^{[1
]}

PLUMMER, JD ^{[1
]}

机构：

[1] STANFORD UNIV,APPL ELECTR LAB 214,STANFORD,CA 94305

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 24期

关键词：

D O I：

10.1063/1.115322

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electrical deactivation of arsenic in highly doped silicon has been studied using the positron-beam technique. Direct experimental evidence linking the formation of arsenic-vacancy complexes (i.e., As-n-v) to the deactivation process is reported. The average number of arsenic atoms per complex, (n) over bar>2, was determined by comparing the observed complex concentrations with those of the deactivated arsenic inferred from Hall-effect measurements. (C) 1995 American Institute of Physics.

引用

页码：3575 / 3577

页数：3

共 18 条

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