POINT-DEFECT PRODUCTION IN ARSENIC-DOPED SILICON STUDIED WITH VARIABLE-ENERGY POSITRONS

被引：24

作者：

JACKMAN, TE ^{[1
]}

AERS, GC ^{[1
]}

DENHOFF, MW ^{[1
]}

SCHULTZ, PJ ^{[1
]}

机构：

[1] UNIV WESTERN ONTARIO,DEPT PHYS,LONDON N6A 3K7,ONTARIO,CANADA

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1989年 / 49卷 / 03期

关键词：

D O I：

10.1007/BF00616864

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：335 / 339

页数：5

共 20 条

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