DEFECT FORMATION IN H-IMPLANTATION OF CRYSTALLINE SI

被引：112

作者：

KEINONEN, J ^{[1
]}

HAUTALA, M ^{[1
]}

RAUHALA, E ^{[1
]}

KARTTUNEN, V ^{[1
]}

KURONEN, A ^{[1
]}

RAISANEN, J ^{[1
]}

LAHTINEN, J ^{[1
]}

VEHANEN, A ^{[1
]}

PUNKKA, E ^{[1
]}

HAUTOJARVI, P ^{[1
]}

机构：

[1] HELSINKI UNIV TECHNOL,PHYS LAB,SF-02150 ESPOO 15,FINLAND

来源：

PHYSICAL REVIEW B | 1988年 / 37卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.37.8269

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8269 / 8277

页数：9

共 45 条

[1] [Anonymous], 1983, POSITRON SOLID STATE
[2] [Anonymous], 1977, STOPPING RANGES IONS
[3] SPUTTERING DAMAGE IN MO(111) STUDIED WITH SLOW POSITRONS AND COMPUTER-SIMULATIONS
BENTZON, MD
HUOMO, H
VEHANEN, A
HAUTOJARVI, P
LAHTINEN, J
HAUTALA, M
[J]. JOURNAL OF PHYSICS F-METAL PHYSICS, 1987, 17 (07): : 1477 - 1490
[4] COMPARISON OF EXPERIMENTAL AND THEORETICAL RANGES OF HEAVY-IONS IN THE LOW-ENERGY REGION
BISTER, M
HAUTALA, M
JANTTI, M
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1979, 42 (3-4): : 201 - 208
[5] ON LOW-TEMPERATURE ION-BEAM MIXING OF THIN MARKERS IN NICKEL
BOTTIGER, J
NIELSEN, SK
THORSEN, PT
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) : 707 - 710
[6] BROWN WL, 1985, MATER RES SOC S P, V51, P53
[7] CHOYKE WJ, 1984, 13TH P INT C DEF SEM, P789
[8] DISPLACEMENT CRITERION FOR AMORPHIZATION OF SILICON DURING ION-IMPLANTATION
CHRISTEL, LA
GIBBONS, JF
SIGMON, TW
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) : 7143 - 7146
[9] Chu W. K., 1978, BACKSCATTERING SPECT
[10] DISTRIBUTION OF IRRADIATION DAMAGE IN SILICON BOMBARDED WITH HYDROGEN
CHU, WK
KASTL, RH
LEVER, RF
MADER, S
MASTERS, BJ
[J]. PHYSICAL REVIEW B, 1977, 16 (09) : 3851 - 3859