INSITU DOPING BY AS ION-IMPLANTATION OF SILICON GROWN BY MOLECULAR-BEAM EPITAXY

被引：13

作者：

DENHOFF, MW ^{[1
]}

HOUGHTON, DC ^{[1
]}

JACKMAN, TE ^{[1
]}

SWANSON, ML ^{[1
]}

PARIKH, NR ^{[1
]}

机构：

[1] UNIV N CAROLINA,DEPT PHYS & ASTRON,CHAPEL HILL,NC 27599

来源：

关键词：

D O I：

10.1063/1.341350

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3938 / 3944

页数：7

共 28 条

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[4] DENHOFF MW, UNPUB
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