Temperature dependence of the band gap of semiconducting carbon nanotubes

被引:121
作者
Capaz, RB
Spataru, CD
Tangney, P
Cohen, ML
Louie, SG
机构
[1] Univ Fed Rio de Janeiro, Inst Fis, BR-21941972 Rio De Janeiro, Brazil
[2] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[3] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA
关键词
D O I
10.1103/PhysRevLett.94.036801
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The temperature dependence of the band gap of semiconducting single-wall carbon nanotubes (SWNTs) is calculated by direct evaluation of electron-phonon couplings within a "frozen-phonon" scheme. An interesting diameter and chirality dependence of E-g(T) is obtained, including nonmonotonic behavior for certain tubes and distinct "family" behavior. These results are traced to a strong and complex coupling between band-edge states and the lowest-energy optical phonon modes in SWNTs. The E-g(T) curves are modeled by an analytic function with diameter- and chirality-dependent parameters; these provide a valuable guide for systematic estimates of E-g(T) for any given SWNT. The magnitudes of the temperature shifts at 300 K are smaller than 12 meV and should not affect (n,m) assignments based on optical measurements.
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页数:4
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