Optical properties of InAs/GaAs surface quantum dots

被引：51

作者：

Miao, ZL ^{[1
]}

Zhang, YW ^{[1
]}

Chua, SJ ^{[1
]}

Chye, YH ^{[1
]}

Chen, P ^{[1
]}

Tripathy, S ^{[1
]}

机构：

[1] Inst Mat Res & Engn, Singapore 117602, Singapore

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 03期

关键词：

D O I：

10.1063/1.1854199

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report long-wavelength photoluminescence emission (similar to 1.6-1.7 mum) from self-organized InAs surface quantum dots (SQDs) grown on GaAs substrate without any capping layers. Photoluminescence (PL) properties of these quantum dots (QDs) are strongly affected by the surface states and strain relaxation mechanism. Compared to the case of capped InAs QDs, a large redshift of about 466 nm observed in the PL spectrum of SQDs can be attributed to the strain relaxation and the strong coupling of the confined states with the surface states. The PL properties of these SQDs can also be influenced by the presence of quasi-infinite surface potential. (C) 2005 American Institute of Physics.

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页码：1 / 3

页数：3

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