Highly ordered nanostructures of single crystalline GaN nanowires in anodic alumina membranes

被引:86
作者
Cheng, GS [1 ]
Chen, SH [1 ]
Zhu, XG [1 ]
Mao, YQ [1 ]
Zhang, LD [1 ]
机构
[1] Chinese Acad Sci, Inst Solid State Phys, Hefei 230032, Peoples R China
来源
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 2000年 / 286卷 / 01期
关键词
highly ordered nanostructure; GaN nanowires; VLS growth;
D O I
10.1016/S0921-5093(00)00630-4
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Synthesis of highly ordered nanostructures of single crystalline GaN nanowires in anodic alumina membranes was achieved through a gas reaction of Ga2O vapor with a constant ammonia atmosphere at 1000 degrees C in the presence of nano-sized metallic indium catalysis. Atomic force microscopy, X-ray diffraction, Raman backscattering spectrum. scanning electron microscopy, and transmission electron microscopy indicate that the ordered nanostructure consists of the single crystalline hexagonal wurtzite GaN nanowires with about 20 nm in diameter and 40 similar to 50 mu m in length in the uniform nanochannels of the anodic alumina membrane. The vapor-liquid-solid (VLS) growth mechanism of the ordered nanostructure was discussed in detail. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:165 / 168
页数:4
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