Dithienylbenzobis(thiadiazole) based organic semiconductors with low LUMO levels and narrow energy gaps

被引:89
作者
Kono, Takahiro [1 ]
Kumaki, Daisuke [2 ]
Nishida, Jun-ichi [1 ]
Tokito, Shizuo [1 ,2 ]
Yamashita, Yoshiro [1 ]
机构
[1] Tokyo Inst Technol, Dept Elect Chem, Interdisciplinary Grad Sch Sci & Engn, Midori Ku, Kanagawa 2268502, Japan
[2] NHK Japan Broadcasting Corp, Setagaya Ku, Tokyo 157851, Japan
关键词
THIN-FILM TRANSISTORS; N-CHANNEL; HIGH-PERFORMANCE; CHARGE-TRANSFER; DONOR; BANDGAP; MOBILITY; DESIGN;
D O I
10.1039/b925151k
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Novel OFET materials showing high mobility (0.77 cm(2) V-1 s(-1)) and good air-stability were developed using a benzobis(thiadiazole) (BBT) unit and the high FET performance was attributed to the low LUMO level and the film morphology.
引用
收藏
页码:3265 / 3267
页数:3
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