Integrated process modeling and experimental validation of silicon carbide sublimation growth

A model that integrates heat and mass transfer, growth kinetics, anisotropic thermal stresses is developed to predict the global temperature distribution, growth rate and dislocation distribution. The simulated temperature and growth rate are compared with the experimental measurements. The time-depending growth process, e.g., the variations of the growth rate, the growth interface shape, and the thermal stresses with time in the growing crystal are studied using the integrated model. The resolved shear stress and the von Mises stress are used to predict the dislocation density. The effects of geometric configuration and design parameters on the growth of crystal are also discussed. (C) 2003 Elsevier Science B.V. All rights reserved.