Plastic deformation and residual stresses in SiC boules grown by PVT

被引：32

作者：

Ha, S

Rohrer, GS

Skowronski, M

Heydemann, VD

Snyder, DW

机构：

[1] Carnegie Mellon Univ, Dept Mat Sci & Engn, Pittsburgh, PA 15213 USA

[2] II VI Inc, Saxonburg, PA 16056 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

bulk crystal growth; physical vapor transport; plastic deformation; residual stresses; thermoelastic stress;

D O I：

10.4028/www.scientific.net/MSF.338-342.67

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

dThe thermoelastic stress distribution in growing 6H SiC crystals was simulated using a two dimensional finite element model. Based on the calculated stress distribution, possible plastic deformation of the material was postulated. High resolution x-ray diffraction (HRXRD) was used to detect the net deformation and residual stresses in the grown crystals. The results were in agreement with the postulated plastic deformation.

引用

页码：67 / 70

页数：4

共 10 条

[1]

Inoue Z, 1983, P INT S CERAMIC COMP, P519

[2] The elastic constants of silicon carbide: A Brillouin-scattering study of 4H and 6H SiC single crystals [J].

Kamitani, K ;

Grimsditch, M ;

Nipko, JC ;

Loong, CK ;

Okada, M ;

Kimura, I .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (06) :3152-3154

[3]

Li Z., 1988, International Journal of High Technology Ceramics, V4, P1, DOI 10.1016/0267-3762(88)90060-4

[4] State of the art in the modelling of SiC sublimation growth [J].

Pons, M ;

Anikin, M ;

Chourou, K ;

Dedulle, JM ;

Madar, R ;

Blanquet, E ;

Pisch, A ;

Bernard, C ;

Grosse, P ;

Faure, C ;

Basset, G ;

Grange, Y .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 :18-28

[5] A practical model for estimating the growth rate in sublimation growth of SiC [J].

Råback, P ;

Yakimova, R ;

Syväjärvi, M ;

Nieminen, R ;

Janzén, E .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 :89-92

[6] Optimization of sublimation growth of SiC bulk crystals using modeling [J].

Ramm, MS ;

Mokhov, EN ;

Demina, SE ;

Ramm, MG ;

Roenkov, AD ;

Vodakov, YA ;

Segal, AS ;

Vorob'ev, AN ;

Karpov, SY ;

Kulik, AV ;

Makarov, YN .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 :107-112

[7]

Samant AV, 1998, PHYS STATUS SOLIDI A, V166, P155, DOI 10.1002/(SICI)1521-396X(199803)166:1<155::AID-PSSA155>3.0.CO

[8]

2-V

[9] Numerical simulation of global heat transfer in reactors for SiC bulk crystal growth by physical vapor transport [J].

Selder, M ;

Kadinski, L ;

Durst, F ;

Straubinger, T ;

Hofmann, D .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 :93-97

[10] A theoretical and empirical perspective of SiC bulk growth [J].

Tsvetkov, VF ;

Henshall, DN ;

Brady, MF ;

Glass, RC ;

Carter, CH .

WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE, 1998, 512 :89-99

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