Numerical simulation of global heat transfer in reactors for SiC bulk crystal growth by physical vapor transport

被引：20

作者：

Selder, M

Kadinski, L

Durst, F

Straubinger, T

Hofmann, D

机构：

[1] Univ Erlangen Nurnberg, Inst Fluid Mech, D-91058 Erlangen, Germany

[2] Univ Erlangen Nurnberg, Dept Mat Sci, D-91058 Erlangen, Germany

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 61-2卷

关键词：

global heat transfer; numerical modeling; physical vapor transport; SiC bulk growth;

D O I：

10.1016/S0921-5107(98)00453-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A modeling approach for the numerical simulation of heat transfer during SIC sublimation growth in inductively heated PVT-reactors is introduced. The physical model takes into account the volume heat sources induced by the electromagnetic field and the main processes contributing to the conservation equations for mass, momentum and energy. Results of calculations are compared to experimental observations to discuss the validity of the modeling approach. The computed isotherms and their temporal evolution agree with the shape of grown SiC crystals during a growth run. (C) 1999 Elsevier Science S.A. All rights reserved.

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收藏

页码：93 / 97

页数：5

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