A practical model for estimating the growth rate in sublimation growth of SiC

被引：14

作者：

Råback, P

Yakimova, R

Syväjärvi, M

Nieminen, R

Janzén, E

机构：

[1] Ctr Comp Sci, FIN-02101 Espoo, Finland

[2] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

[3] Okmet AB, S-17824 Ekero, Sweden

[4] Helsinki Univ Technol, Phys Lab, FIN-02015 Helsinki, Finland

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 61-2卷

关键词：

silicon carbide; crystal growth; physical vapor transport; mathematical modeling;

D O I：

10.1016/S0921-5107(98)00452-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An analytical model for the growth rate of one-dimensional sublimation process is presented. The model takes into account latent heat, diffusion through inert gas and absorption-desorption at the active surfaces. It is best applicable to growth at relatively high pressures and/or small source-to-seed distances. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：89 / 92

页数：4

共 9 条

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Gurvich L.V., 1990, THERMODYNAMIC PROPER, V2

[2]

Hofmann D, 1998, MATER RES SOC SYMP P, V483, P301

[3]

Karpov SY, 1997, PHYS STATUS SOLIDI B, V202, P201, DOI 10.1002/1521-3951(199707)202:1<201::AID-PSSB201>3.0.CO

[4]

2-T