Analytical model of silicon carbide growth under free-molecular transport conditions

被引：12

作者：

Karpov, SY

Makarov, YN

Ramm, MS

机构：

[1] UNIV ERLANGEN NURNBERG,FLUID MECH DEPT,D-91058 ERLANGEN,GERMANY

[2] CTR ADV TECHNOL,ST PETERSBURG 194156,RUSSIA

[3] RUSSIAN ACAD SCI,AF IOFFE PHYS TECH INST,ST PETERSBURG 194021,RUSSIA

来源：

JOURNAL OF CRYSTAL GROWTH | 1996年 / 169卷 / 03期

关键词：

D O I：

10.1016/S0022-0248(96)00416-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

An advanced approach is proposed for the theoretical analysis of SiC growth with techniques utilizing a free-molecular transport of the vapor species to the surface. The multicomponent nature of the Si-C vapor phase is taken into account. The calculated data are compared to the results of SiC growth experiments by the sublimation sandwich method.

引用

收藏

页码：491 / 495

页数：5

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