THERMODYNAMIC ANALYSIS OF MOLECULAR-BEAM EPITAXY OF III-V COMPOUNDS - APPLICATION TO THE GAYIN1-YAS MULTILAYER EPITAXY

被引:18
作者
SHEN, JY
CHATILLON, C
机构
[1] Laboratoire de Thermodynamique et Physico-Chimie Métallurgiques, Associé au CNRS, URA 29, ENSEEG., Domaine Universitaire, BP 75
关键词
D O I
10.1016/0022-0248(90)90029-K
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The basis of the thermodynamic analysis of molecular beam epitaxy (MBE) for III-V compounds is established. Condensation and evaporation phenomena that compete for the crystal growth are presented referred to equilibrium conditions. Sticking coefficients, growth rates, composition impinging flows or source temperatures are calculated for the MBE of Ga(y)In1-yAs epilayers from thermodynamically assessed data for the As-Ga, As-In, Ga-In and As-Ga-In systems.
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页码:553 / 565
页数:13
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