Off-resonance Γ-Χ mixing in semiconductor quantum wires

被引：11

作者：

Di Carlo, A ^{[2
]}

Pescetelli, S

Kavokin, A

Vladimirova, M

Lugli, P

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Univ Rome Tor Vergata, INFM, Dipartimento Ingn Elettron, I-00133 Rome, Italy

来源：

PHYSICAL REVIEW B | 1998年 / 57卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.57.9770

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a theoretical study of the electronic states in T-, L-, and V-shaped realistic quantum wires taking into account Gamma-X mixing in the conduction band. Calculations are based on two different approaches, namely, a tight-binding and a multivalley envelope function (MVEF) technique. A strong reduction of the electron energy due to the off-resonant Gamma-X mixing has been found in all types of quantum wires. This effect appears to be enhanced by a strong localization of the electron wave function and by a strong overlap with atomic layers next to heterointerfaces. The remarkable agreement between the results obtained within the two approaches proves the validity of MVEF methods over a wide range of one-dimensional heterosystems. [S0163-1829(98)05416-2].

引用

页码：9770 / 9779

页数：10

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