Nitride-mediated epitaxy of CoSi2 on Si(001)

被引:30
作者
Chong, RKK
Yeadon, M
Choi, WK
Stach, EA
Boothroyd, CB
机构
[1] Inst Mat Res & Engn, Singapore 117602, Singapore
[2] Natl Univ Singapore, Dept Mat Sci, Singapore 119260, Singapore
[3] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 119260, Singapore
[4] Univ Calif Berkeley, Lawrence Berkeley Lab, Natl Ctr Electron Microscopy, Berkeley, CA 94720 USA
[5] Univ Cambridge, Dept Mat Sci, Cambridge CB2 3QZ, England
关键词
D O I
10.1063/1.1555708
中图分类号
O59 [应用物理学];
学科分类号
摘要
Epitaxial layers of CoSi2 have been grown on Si(100) by the technique of nitride-mediated epitaxy. An ultrathin layer of silicon nitride was formed on the Si(001) surface by exposure to ammonia gas at 900 degreesC, followed by the deposition of a layer of Co similar to20 A in thickness at room temperature. The sample was then annealed at 600 degreesC and the microstructure monitored by in situ transmission electron microscopy and diffraction. The formation of epitaxial islands of CoSi2 was observed directly, with no evidence of the formation of intermediate phases. The CoSi2 islands were found to be elongated along the in-plane Si<110> directions, consistent with reports of the deposition of Co by molecular beam epitaxy on clean Si(100) at low deposition rates and elevated temperature. This technique of silicidation may be of particular interest in the fabrication of advanced devices incorporating multilayer oxide/nitride gate stacks. (C) 2003 American Institute of Physics.
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页码:1833 / 1835
页数:3
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