Growth and characterization of nanocrystalline CdSe thin films deposited by the successive ionic layer adsorption and reaction method

被引：93

作者：

Kale, RB ^{[1
]}

Sartale, SD

Chougule, BK

Lokhande, CD

机构：

[1] Rajaram Coll, Dept Phys, Kolhapur 416004, Maharashtra, India

[2] Hahn Meitner Inst Berlin GmbH, D-14109 Berlin, Germany

[3] Shivaji Univ, Dept Phys, Thin Film Phys Lab, Kolhapur 416004, Maharashtra, India

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2004年 / 19卷 / 08期

关键词：

D O I：

10.1088/0268-1242/19/8/006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The successive ionic layer adsorption and reaction method was used to deposit CdSe thin films on glass substrates at room temperature (300 K). The films were characterized by x-ray diffraction, energy dispersive x-ray analysis, scanning electron microscopy, atomic force microscopy and high-resolution transmission electron microscopy. Optical absorption and electrical resistivity were measured. The CdSe layer grew with nanocrystalline cubic phase along with some amorphous phase present in CdSe film, with an optical band gap 'E-g' of 2.1 eV and room temperature electrical resistivity of the order of 10(6) Omega cm.

引用

页码：980 / 986

页数：7

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