Electric-field effects on excitons in quantum dots

被引:102
作者
Heller, W [1 ]
Bockelmann, U
Abstreiter, G
机构
[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
[2] Ecole Normale Super, Phys Mat Condensee Lab, F-75005 Paris, France
来源
PHYSICAL REVIEW B | 1998年 / 57卷 / 11期
关键词
D O I
10.1103/PhysRevB.57.6270
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Using low-temperature microphotoluminescence spectroscopy we have investigated the effect of a lateral electric field on quantum dot excitons trapped by monolayer width fluctuations in a narrow quantum well. We observe a redshift of the ground state and several excited states, when a lateral field is applied. This Stark shift is reduced when the dot is populated with several excitons that screen the electric field. The lines broaden increasingly at high fields, which is attributed to field-induced lateral tunneling out of the dot.
引用
收藏
页码:6270 / 6273
页数:4
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