Energy band dispersion in well ordered N,N′-dimethyl-3,4,9,10-perylenetetracarboxylic diimide films

被引：33

作者：

Gavrila, GN ^{[1
]}

Mendez, H

Kampen, TU

Zahn, DRT

Vyalikh, DV

Braun, W

机构：

[1] Tech Univ Chemnitz, Inst Phys, D-09107 Chemnitz, Germany

[2] Tech Univ Dresden, Inst Festkorperphys, D-01062 Dresden, Germany

[3] BESSY, D-12489 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 20期

关键词：

D O I：

10.1063/1.1800273

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electronic properties of well ordered N,N-'-dimethyl-3,4,9,10-perylenetetracarboxylic dimide (DiMe-PTCDI) films prepared on sulfur passivated GaAs(001) substrates were studied by means of photoemission spectroscopy. From the photon energy dependence of normal emission spectra an intermolecular energy band dispersion of about 0.2 eV was determined for the highest occupied molecular orbital (HOMO). Simulation of the density of states reveals that the HOMO band has a single pi -character. The observed energy band dispersion thus originates from the intermolecular pi-pi interaction and is modeled using the tight binding model. The analysis provides a value of 0.04 eV for the transfer integral. The inner potential was treated as a fitting parameter such that the expected periodicity of the dispersion in the reciprocal space was obtained. (C) 2004 American Institute of Physics.

引用

页码：4657 / 4659

页数：3

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