Structural analysis of multilayer graphene via atomic moireacute interferometry

被引：141

作者：

Miller, David L. ^{[1
]}

Kubista, Kevin D. ^{[1
]}

Rutter, Gregory M. ^{[2
]}

Ruan, Ming ^{[1
]}

de Heer, Walt A. ^{[1
]}

First, Phillip N. ^{[1
]}

Stroscio, Joseph A. ^{[2
]}

机构：

[1] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

[2] NIST, Ctr Nanoscale Sci & Technol, Gaithersburg, MD 20899 USA

来源：

PHYSICAL REVIEW B | 2010年 / 81卷 / 12期

关键词：

SCANNING-TUNNELING-MICROSCOPY; EPITAXIAL GRAPHENE; CARBON NANOTUBES; GRAPHITE SURFACE; STM; DEFECTS;

D O I：

10.1103/PhysRevB.81.125427

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Rotational misalignment of two stacked honeycomb lattices produces a moireacute pattern that is observable in scanning tunneling microscopy as a small modulation of the apparent surface height. This is known from experiments on highly oriented pyrolytic graphite. Here, we observe the combined effect of three-layer moireacute patterns in multilayer graphene grown on SiC(0001). Small-angle rotations between the first and third layer are shown to produce a "double-moireacute" pattern, resulting from the interference of moireacute patterns from the first three layers. These patterns are strongly affected by relative lattice strain between the layers. We model the moireacute patterns as a beat-period of the mismatched reciprocal lattice vectors and show how these patterns can be used to determine the relative strain between lattices, in analogy to strain measurement by optical moireacute interferometry.

引用

页数：6

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