Synthesis, growth mechanism and optical characterization of zinc nitride hollow structures

被引:27
作者
Khan, Waheed S. [1 ]
Cao, Chuanbao [1 ]
机构
[1] Beijing Inst Technol, Sch Mat Sci & Engn, Res Ctr Mat Sci, Beijing 100081, Peoples R China
基金
中国国家自然科学基金; 高等学校博士学科点专项科研基金;
关键词
Hollow structure; Nitridation; Zinc nitride; Semiconductor; PL emission; Optical band gap; THIN-FILMS; BAND-GAP; ELECTRICAL-PROPERTIES; SOL-GEL; FABRICATION; ZN3N2; ROUTE; CONVERSION; TEMPLATES; ALUMINUM;
D O I
10.1016/j.jcrysgro.2010.02.038
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
In this report, we describe the noncatalytic and template-free synthesis of zinc nitride (Zn3N2) novel microstructures with hollow interiors via simple nitridation reaction of zinc powder at optimum temperature of 600 degrees C for 120 min in ammonia gas environment under atmospheric pressure. Hollow microstructures obtained were mostly of spherical shape with diameters in the range 8-35 mu m and with open mouth on the surface. The growth mechanism has been proposed for the elucidation of hollow structures formation. Crystal structure and phase purity of the product were investigated by X-ray diffraction (XRD) characterization and energy dispersive X-ray spectroscopy (EDS) analysis confirmed the chemical composition of the product. Morphology of the as-prepared product was investigated using scanning electron microscopy (SEM). Ultraviolet-visible-near infrared (UV-vis-NIR) spectrophotometry was used to study the transmittance behaviour of zinc nitride microstructures and thereby an indirect optical band gap of 2.81 eV was calculated using Davis-Mott model. Room temperature photoluminescence (PL) studies exhibited two prominent peaks of the product; one very strong peak near band edge UV emission (395 nm) and other comparatively suppressed and broad peak at orange luminescence emission (670 nm). (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:1838 / 1843
页数:6
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