Epitaxial growth of orientation-controlled KNbO3 crystal films on MgO using KTaxNb1-xO3 intermediate layer by metalorganic chemical vapor deposition

被引：15

作者：

Onoe, A ^{[1
]}

Yoshida, A ^{[1
]}

Chikuma, K ^{[1
]}

机构：

[1] Pioneer Corp, Corp Res & Dev Labs, Tsurugashima, Saitama 3502288, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 01期

关键词：

D O I：

10.1063/1.1336557

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, we report a method to obtain an orientation-controlled (010) KNbO3 crystal film on (110) MgO substrate based on the epitaxial growth by the low-pressure metalorganic chemical vapor deposition. In order to control the orientation of the KNbO3 film, an intermediate layer of KTaxNb1-xO3 was used. In the case where the Ta/(Ta+Nb) ratio of the KTaxNb1-xO3 film was over 40%, we could obtain (010)-oriented epitaxial KNbO3 films. Furthermore, the surface morphology of the deposited film, the thickness of which was about 1 mum, was smooth at the Ta/(Ta+Nb) ratio of 60%. The measurement of the refractive index dispersion of the KNbO3 crystal film was also carried out. (C) 2001 American Institute of Physics.

引用

页码：49 / 51

页数：3