Anisotropy of interband transitions in InAs quantum wires: An atomistic theory

被引:31
作者
Califano, M [1 ]
Zunger, A [1 ]
机构
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
来源
PHYSICAL REVIEW B | 2004年 / 70卷 / 16期
关键词
D O I
10.1103/PhysRevB.70.165317
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electronic and optical properties of [001]-oriented free-standing InAs cylindrical quantum wires (QWRs) with diameters 10-100 Angstrom are calculated using an atomistic, empirical pseudopotential plane-wave method. We analyze the effect of different degrees of mixing between valence bands on the optical properties of these nanostructures, by switching on and off the spin-orbit interaction. The fundamental transition in these QWRs exhibit a large anisotropy, with emission polarized prevalently along the wire axis z. The magnitude of such an anisotropy is found to depend on both degree of valence band mixing and wire size. In higher energy interband transitions, we find anisotropies close to 100% with emission polarized perpendicular to the wire axis. Furthermore, in large wires, transitions involving highly excited valence states show in-plane polarization anisotropies between the [110] and [1 (1) over bar0] directions. InAs wires can therefore switch between z-polarized to xy-polarized emission/absorption for different excitation energies. This makes them ideally suited for application in orientation-sensitive devices.
引用
收藏
页码:1 / 11
页数:11
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