Double-island single-electron transistor for noise-suppressed detection of charge transfer

被引:4
作者
Brenner, R [1 ]
Hamilton, AR
Clark, RG
Dzurak, AS
机构
[1] Univ New S Wales, Special Res Ctr Quantum Comp Technol, Australian Res Council, Sydney, NSW 2052, Australia
[2] Univ New S Wales, Sch Phys, Sydney, NSW 2052, Australia
[3] Univ New S Wales, Sch Elect Engn & Telecommun, Sydney, NSW 2052, Australia
关键词
single-electron transistor; double-dot; charge transfer; random charge noise;
D O I
10.1016/S0167-9317(03)00143-6
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In order to access the computational result stored in a quantum computer, the state of a quantum-bit (qubit) needs to be read out. Single-electron transistors (SETs) have been shown to meet the requirements of sensitivity, low back-action, and speed required for quantum-state read-out. Despite these advantages, SETs are susceptible to random charge noise associated with trapping/de-trapping processes in the substrate or tunnel barrier oxide. These random events lead to spurious signals in the SET output and make reliable measurement difficult. In order to overcome this limitation, recent experiments have focused on using two SET detectors to suppress background charge noise by cross-correlating the signals. Here, we report measurements on a double-island SET, which has the potential to suppress the effect of charge noise during readout using only a single device. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:826 / 831
页数:6
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