High ON/OFF ratio and stability of amorphous organic field-effect transistors based on spiro-linked compounds

被引：72

作者：

Saragi, TPI

Fuhrmann-Lieker, T

Salbeck, J

机构：

[1] Univ Gesamthsch Kassel, Dept Sci, D-34109 Kassel, Germany

[2] Univ Gesamthsch Kassel, CINSaT, D-34109 Kassel, Germany

来源：

SYNTHETIC METALS | 2005年 / 148卷 / 03期

关键词：

organic field-effect transistors; spiro-linked compounds; ON/OFF ratio; stability;

D O I：

10.1016/j.synthmet.2004.10.007

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report high ON/OFF ratios for organic field-effect transistors (OFETs) based on amorphous thin films of spiro-linked compounds. Bottom-contact OFET structures are fabricated, using 2,2',7,7'-tetra-(m-tolyl-phenylamino)-9,9'-spirobifluorene (Spiro-TPD) and 2,2',7,7'-tetrakis-(diphenylamino)-9,9'-spirobifluorene (Spiro-TAD) as active materials. The field-effect mobility of holes in Spiro-TPD and Spiro-TAD thin films is 7 x 10(-5) cm(2)/Vs. We obtained ON/OFF ratios up to 3.6 x 10(6) with low OFF currents in the pA range. Time-dependent measurements show that the transistor characteristics do not change significantly over 9 months. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：267 / 270

页数：4

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