Correlation of boron content and high temperature stability in Si-B-C-N ceramics

被引：90

作者：

Müller, A

Gerstel, P

Weinmann, M

Bill, J

Aldinger, F

机构：

[1] Univ Stuttgart, Max Planck Inst Met Forsch, D-70569 Stuttgart, Germany

[2] Univ Stuttgart, Inst Nichtmet Anorgan Mat, Pulvermet Lab, D-70569 Stuttgart, Germany

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2000年 / 20卷 / 14-15期

关键词：

precursors-organic; Si-B-C-N; silazanes; stability; thermal properties;

D O I：

10.1016/S0955-2219(00)00131-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The preparation and characterization of precursor derived Si-B-C-N ceramics with similar Si/C/N ratios but variable boron content are reported. The polymeric precursors were prepared via hydroboration of poly(methylvinylsilazane) using different BH3. SMe2/polymer stoichiometries. High temperature thermogravimetric analysis of as-pyrolysed ceramics as well as XRD studies of post-annealed samples display a retarding effect of boron on both crystallization of SiC and Si3N4 and stabilization of crystalline beta -Si3N4. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：2655 / 2659

页数：5

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