Thermoelectric properties of Ce-based Kondo semimetals and semiconductors

被引：45

作者：

Takabatake, T

Sasakawa, T

Kitagawa, J

Suemitsu, T

Echizen, Y

Umeo, K

Sera, M

Bando, Y

机构：

[1] Hiroshima Univ, Dept Quantum Matter, ADSM, Higashihiroshima 7398530, Japan

[2] Kure Natl Coll Technol, Dept Elect Engn, Kure 7378506, Japan

来源：

PHYSICA B-CONDENSED MATTER | 2003年 / 328卷 / 1-2期

关键词：

thermoelectric material; pseudogap; Kondo semiconductor;

D O I：

10.1016/S0921-4526(02)01808-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report a systematic study of thermoelectric properties of a series of Ce-based compounds with. the epsilon-TiNiSi-type structure; metallic CePtSn, semimetallic CeNiSn and CeRhSb, and semiconducting CeRhAs. In this sequence, both the Kondo temperature and hybridization-gap width increase, whereas the phonon thermal conductivity at high temperatures decreases. Opening of the pseudogap in CeRhSb and CeRhAs enlarges the thermopower, and leads to the maxima of the thermoelectric figure of merit, 1.7 x 10(-3)/K at 12 K and 1.0 x 10(-3)/K at 115 K, respectively. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：53 / 57

页数：5

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